Power Supplies

Alpha and Omega Semiconductor has released a 7A 23V USB Type-C protection and reverse-blocking switch IC. Dubbed AOZ1377DI, is can be used in both Sink and Source applications and it “offers features that significantly reduce voltage drop and power loss compared to back-to-back p-channel devices”, promises the company. Instead it uses a pair of internal drain-to-drain n-channel mosfets, whose gates ...

EPC has used GaN transistors to create a high-power Class-D two-channel audio power amplifier design. Instantiated in evaluation kit EPC9192, it is capable of pushing 700W/channel into 4Ω (or 2Ω) or 350W/channel into 8Ω. Bridging the two channels results in 1.4kW drive into 4 to 8Ω. Key components, per channel, are a pair of 200V EPC2307 GaN transistors on a ...

Innoscience Technology has created a gate driver specifically for GaN power transistors. The single-channel INS1001DE is intended to supply fast powerful voltage-regulated waveforms to the gates, which are extremely sensitive to over-voltage stress. Its output pulse amplitude is set by a low-drop-out regulator using two resistors, to, for example 6V which is commonly specified for enhancement-mode GaN hemts (diagram below ...

TDK has announced automotive smart motor drivers that can handle 4 x 1A peak current and include an Arm Cortex-M3 processor core. HVC 5222D with 32kbyte of flash and HVC 5422D with 64kbyte can drive brushless dc, brushed dc (2A) and stepper motors. They also have 4kbyte ram, 2kbyte of emulated eeprom and 1kbyte of non-volatile registers, and are “SEooC ...

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...

Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...

Weidmuller has announced a series of battery connectors and battery connector cable assemblies. They are “engineered to handle high currents” and “designed to withstand harsh environmental conditions”, according to the company. Connectors for cables from 16 to 95mm2 are available, with contacts made from copper alloy finished with silver and, approved according to UL 4128. Predicted mechanical connection life, without ...

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...